Competition between quantum fluctuation and ferroelectric order in Eu_1-xBa_xTiO₃WEI, T; ZHOU, Q. J; YANG, X et al.Applied surface science. 2012, Vol 258, Num 10, pp 4601-4606, issn 0169-4332, 6 p.Article

Monte Carlo Investigation of Mixed Normal and Relaxor FerroelectricsLAOSIRITAWORN, Yongyut; KANCHIANG, Kanokwan; YIMNIRUN, Rattikorn et al.Ferroelectrics (Print). 2009, Vol 382, pp 28-35, issn 0015-0193, 8 p.Conference Paper

Heteroepitaxial growth of Pb(Mg_1/3Ta_2/3)O₃ thin films on SrTiO₃ substrates using chemical solution deposition method: microstructural evolutionJEONG, Dae-Soo; SHIM, Yeon-Ah; MOON, Jong-Ha et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 561-567, issn 0167-9317, 7 p.Conference Paper

Fabrication and properties of silicon-based PZT thin films for MFSFET applicationsREN, Tian-Ling; SHAO, Tian-Qi; ZHANG, Wu-Quan et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 554-560, issn 0167-9317, 7 p.Conference Paper

Harvesting Nanoscale Thermal Radiation Using Pyroelectric MaterialsJIN FANG; FREDERICH, Hugo; PILON, Laurent et al.Journal of heat transfer. 2010, Vol 132, Num 9, issn 0022-1481, 092701.1-092701.10Article

Dramatic Reduction of FMR Linewidth in Epitaxial Pb(ZrTi)O ₃-NiFe₂O₄ Nanocomposite FilmsFEIMING BAI; GUO YU; YICHENG WANG et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4299-4302, issn 0018-9464, 4 p.Conference Paper

Relaxor-like improper ferroelectricity induced by S_i · S_j-type collinear spin ordering in a M-type hexaferrite PbFe₆Ga₆O₁₉EUN HYE NA; SEUNGWOO SONG; KOO, Yang-Mo et al.Acta materialia. 2013, Vol 61, Num 20, pp 7705-7711, issn 1359-6454, 7 p.Article

Features of Phase Transitions in Nanostructured Ferroelectric Oxides Revealed from Calorimetric DataSTRUKOV, B; DAVITADZE, S; SOUKIASSIAN, A. H. G et al.Ferroelectrics (Print). 2011, Vol 414, pp 1-11, issn 0015-0193, 11 p.Conference Paper

Structural Disorder, Polarisation and the Normal to Relaxor Ferroelectric Transition in BaTiO₃ Based PerovskitesLIU, Y; WITHERS, R. L.Ferroelectrics (Print). 2010, Vol 402, pp 3-9, issn 0015-0193, 7 p.Conference Paper

Measurements of ion-induced ferroelectric emission and surface charge dynamics on LiTaO₃(0001) by time-of-flight scattering and recoiling spectrometry (TOF-SARS)LUI, K. M; LEANG, P. S; KAM, Y. K et al.Surface and interface analysis. 2006, Vol 38, Num 5, pp 957-963, issn 0142-2421, 7 p.Article

The Debye Dielectric Behavior of Mixed Normal and Relaxor-Ferroelectrics: Monte Carlo InvestigationLAOSIRITAWORN, Yongyut; KANCHIANG, Kanokwan; NGAMJARUROJANA, Athipong et al.Ferroelectrics (Print). 2010, Vol 401, pp 239-245, issn 0015-0193, 7 p.Conference Paper

Modeling of Hysteresis Phenomena in Ferroelectric Polymers in a Low Frequency Electric FieldBELOUADAH, R; KENDIL, D; BOUSBIAT, E et al.Journal of intelligent material systems and structures. 2009, Vol 20, Num 6, pp 733-739, issn 1045-389X, 7 p.Article

Ferroelectric Characterization of Isolated BaTiO₃ ParticlesLEHNERT, Tobias; ADAM, Jens; DRUMM, Robert et al.Ferroelectrics (Print). 2011, Vol 420, pp 49-55, issn 0015-0193, 7 p.Conference Paper

Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories With Intermediate ElectrodesHORITA, Susumu; BUI NGUYEN QUOC TRINH.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 12, pp 3090-3096, issn 0018-9383, 7 p.Article

Ten-Nanometer Ferroelectric Si:HfO₂ Films for Next-Generation FRAM CapacitorsMUELLER, Stefan; SUMMERFELT, Scott R; MÜLLER, Johannes et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1300-1302, issn 0741-3106, 3 p.Article

The Strong Dependence of Polarization Fatigue on Poling-Voltage Conditions in Ferroelectric Vinylidene Fluoride and Trifluoroethylene Copolymer FilmsGUODONG ZHU; YU CONG; JIHAO ZHANG et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 359-361, issn 0741-3106, 3 p.Article

Analysis of the Piezoelectric Performance of Modern 0―3-Type Composites Based on Relaxor-Ferroelectric Single CrystalsTOPOLOV, Vitaly YU; BISEGNA, Paolo; BOWEN, Christopher R et al.Ferroelectrics (Print). 2011, Vol 413, pp 176-191, issn 0015-0193, 16 p.Article

Adaptive optical interconnect using an FLC SLMWILKINSON, T. D; HENDERSON, C; LEYVA, D. Gil et al.Ferroelectrics (Print). 2004, Vol 312, pp 81-85, issn 0015-0193, 5 p.Conference Paper

Stress Dependent Ferroelectric Properties of PZT and 0.9PZT - O.1BLT CeramicsTHONGMEE, Navavan; UNRUAN, Muangjai; YIMNIRUN, Rattikorn et al.Ferroelectrics (Print). 2009, Vol 382, pp 141-146, issn 0015-0193, 6 p.Conference Paper

Surface anchoring and chevron structure in ferroelectric liquid crystalsHAMANEH, M. B; TAYLOR, P. L.Ferroelectrics. Letters section. 2004, Vol 31, Num 3-4, pp 47-53, issn 0731-5171, 7 p.Article

Fabrication of defect-free ferroelectric liquid crystal cells with anti-parallel rubbed alignment filmsFURUE, Hirokazu; NAKASHIBA, Michiya; NOGUCHI, Yuho et al.Ferroelectrics (Print). 2007, Vol 347, pp 168-173, issn 0015-0193, 6 p.Conference Paper

Linear electrostatic micromotor on the basis of ferroelectric ceramicsBAGINSKY, I. L; KOSTSOV, E. G.Ferroelectrics (Print). 2005, Vol 320, pp 141-148, issn 0015-0193, 8 p.Conference Paper

Effect of Barium Substitution on Ferroelectric and Magnetic Properties of Bismuth FerriteDAS, Rajasree; MANDAL, Kalyan.IEEE transactions on magnetics. 2011, Vol 47, Num 10, pp 4054-4057, issn 0018-9464, 4 p.Conference Paper

Control of ferroelectric phase by chemical pressure in (Gd, Tb)MnO₃ crystalsNODA, K; NAKAMURA, S; KUWAHARA, H et al.IEEE transactions on magnetics. 2005, Vol 41, Num 10, pp 2814-2816, issn 0018-9464, 3 p.Conference Paper

A MOS-based behavioral macro-model for ferroelectric capacitorsMENG LIU; JINFENG KANG; JINGHUA ZHANG et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 813-817, issn 0167-9317, 5 p.Conference Paper